 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| EMD6 / UMD6N / IMD6A Transistors General purpose (dual digital transistors) EMD6 / UMD6N / IMD6A !Features 1) Both the DTA143T chip and DTC143T chip in an EMT or UMT or SMT package. 2) Mounting possible with EMT3 or UMT3 or SMT3 automatic mounting machines. 3) Transistor elements are independent, eliminating interference. 4) Mounting cost and area can be cut in half. !External dimensions (Units : mm) EMD6 0.22 (4) (5) (6) (3) (2) 1.2 1.6 (1) 0.13 Each lead has same dimensions ROHM : EMT6 Abbreviated symbol : D6 !Structure A PNP and NPN digital transistor (each with a single built in resistor) (4) 0.65 1.3 0.65 0.8 1.1 0.95 0.95 1.9 2.9 0.7 0.9 (3) EMD6N 0.2 0.5 0.5 0.5 1.0 1.6 2.0 (5) (6) 1.25 2.1 The following characteristics apply to both the DTr1 and DTr2, however, the " -" sign on DTr2 values for the PNP type have been omitted. 0.15 0.1Min. 0to0.1 Each lead has same dimensions ROHM : UMT6 EIAJ : SC-88 Abbreviated symbol : D6 !Equivalent circuit EMD6 / UMD6N (3) (2) R1 (1) IMD6A IMD6A (5) (2) (4) (5) R1 0.3 (6) (6) (4) DTr1 DTr2 R1=4.7k (4) R1 (5) DTr2 R1 (2) DTr1 1.6 0.15 (6) (3) R1=4.7k (1) 2.8 0.3to0.6 0to0.1 Each lead has same dimensions !Absolute maximum ratings (Ta = 25C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector EMD6, UMD6N power dissipation IMD6A Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Limits 50 50 5 100 150 (TOTAL) 300 (TOTAL) 150 -55+150 C C Unit V V V mA mW ROHM : SMT6 EIAJ : SC-74 Abbreviated symbol : D6 1 2 1 120mW per element must not be exceeded. 2 200mW per element must not be exceeded. (3) (1) (1) (2) EMD6 / UMD6N / IMD6A Transistors !Electrical characteristics (Ta = 25C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Input resistance Symbol Min. Typ. Max. Unit BVCBO BVCEO BVEBO ICBO IEBO VCE (sat) hFE fT R1 50 50 5 - - - 100 - 3.29 - - - - - - 250 250 4.7 - - - 0.5 0.5 0.3 600 - 6.11 V V V A A V - IC=50A IC=1mA IE=50A VCB=50V VEB=4V IC/IB=5mA/0.25mA VCE=5V, IC=1mA Conditions MHz VCE=10mA, IE=-5mA, f=100MHz k - Transition frequency of the transistor !Packaging specifications Package Code Type EMD6 UMD6N IMD6A Basic ordering unit (pieces) T2R 8000 Taping TR 3000 T148 3000 !Electrical characteristic curves DTr1 (NPN) VCE=5V COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) 1k 500 1 500m 200m 100m 50m 20m 10m 5m 2m 1m 100 200 500 1m 2m 5m lC/lB=20 DC CURRENT GAIN : hFE 200 100 50 20 10 5 2 1 100 200 500 1m 2m 5m 10m 20m 50m100m Ta=100C 25C -40C Ta=100C 25C -40C 10m 20m 50m 100m COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) Fig.1 DC current gain vs. collector current Fig.2 Collector-emitter saturation voltage vs. collector current DTr2 (PNP) COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) 1k 500 VCE=-5V -1 lC/lB=20 Ta=100C 25C -40C -500m -200m DC CURRENT GAIN : hFE 200 100 50 20 10 5 2 1 -100 -200 -500 -1m -2m -5m -10m -20m -50m-100m Ta=100C 25C -40C -100m -50m -20m -10m -5m -2m -1m -100 -200 -500 -1m -2m -5m -10m -20m -50m-100m COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) Fig.3 DC current gain vs. collector current Fig.4 Collector-emitter saturation voltage vs. collector current |
Price & Availability of UMD6N
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |